Semiconductor device and electronic apparatus

ABSTRACT

The present disclosure relates to a semiconductor device and an electronic apparatus which is capable of reducing variations and deterioration of transistor characteristics. A first connection pad connected with a first wiring and a first floating metal greater than the first connection pad are formed at a bonding surface of a first substrate, whereas a second connection pad connected with a second wiring and a second floating metal greater than the second connection pad are formed at a bonding surface of a second substrate. The first floating metal and the second floating metal formed at the first substrate and the second substrate are bonded to each other. The present disclosure is applicable to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device and anelectronic apparatus, particularly to a semiconductor device and anelectronic apparatus in which variations and deterioration of transistorcharacteristics can be reduced.

BACKGROUND ART

There has been proposed a technology in which two sheets of wafers(substrates) are bonded to each other to thereby connect wirings of thesubstrates to each other (see PTL 1).

In such a technology, in order to secure an overlay margin for bonding,it is preferable for metal portions exposed at bonding surfaces to belarger.

CITATION LIST Patent Literature

[PTL 1]

JP 2000-299379 A

SUMMARY Technical Problem

However, there has been a problem that when the large metal portionsexposed at the bonding surfaces are formed by dry etching, if the metalportions are connected to transistors through underlying wirings, therisk of bringing about variations and deterioration of transistorcharacteristics would be raised.

The present disclosure has been made in consideration of suchcircumstances, and makes it possible to reduce the variations anddeterioration of transistor characteristics.

Solution to Problem

In an aspect of the present technology, there is provided asemiconductor device including a floating metal formed at a bondingsurface of a substrate. The floating metal is bonded to be utilized as acurrent path.

The floating metal is formed to be greater in area than a metalconnected to an underlying wiring at a bonding surface of anothersubstrate to be bonded to the bonding surface of the substrate.

There are provided a first floating metal at a bonding surface of afirst substrate, a second floating metal at a bonding surface of asecond substrate, a first metal connected to an underlying wiring at thebonding surface of the first substrate, and a second metal connected toan underlying wiring at the bonding surface of the second substrate. Thefirst floating metal and the second metal are bonded to each other, thesecond floating metal and the first metal are bonded to each other, andthe first floating metal and the second floating metal are bonded toeach other.

The first floating metal is formed in such a manner as to have a vacantspace in a first central area corresponding to a central portion of thefirst floating metal and to surround the first metal formed in the firstcentral area, and the second floating metal is formed in such a manneras to have a vacant space in a second central area corresponding to acentral portion of the second floating metal and to surround the secondmetal formed in the second central area.

The first floating metal and the first metal are formed in rectangularshapes at the bonding surface of the first substrate, and the secondfloating metal and the second metal are formed in rectangular shapes atthe bonding surface of the second substrate.

The first floating metal is configured at the bonding surface of thefirst substrate in such a shape that, in either one of a transversedirection and a longitudinal direction of a rectangle with a vacantspace in the first central area, a plurality of slits oriented inanother direction are arranged, and the second floating metal isconfigured at the bonding surface of the second substrate in such ashape that, in the other direction of a rectangle with a vacant space inthe second central area, a plurality of slits oriented in the onedirection are arranged.

The first floating metal is configured at the bonding surface of thefirst substrate in such a shape that a plurality of blocks are eachoverlapping with at least one adjacent block at corners thereof whilehaving a vacant space in the first central area, and the second floatingmetal is configured at the bonding surface of the second substrate insuch a shape that a plurality of blocks are each overlapping with atleast one adjacent block at corners thereof while having a vacant spacein the second central area.

There are provided a floating metal at a bonding surface of a firstsubstrate, and at least two metals connected to an underlying wiring ata bonding surface of a second substrate. The floating metal and the atleast two metals are bonded together.

The semiconductor device is a solid-state imaging device.

In an aspect of the present technology, there is provided an electronicapparatus including a solid-state imaging device which includes afloating metal formed at a bonding surface of a substrate and in whichthe floating metal is bonded to be utilized as a current path, a signalprocessing circuit which processes an output signal outputted from thesolid-state imaging device, and an optical system which lets incidentlight be incident on the solid-state imaging device.

In an aspect of the present technology, floating metals formed atbonding surfaces of substrates are bonded to each other to be utilizedas a current path.

Advantageous Effect of Invention

According to the present technology, it is possible to reduce variationsand deterioration of transistor characteristics.

Note that the effect described in the present specification is merely anexample, the effect of the present technology is not limited to theeffect described in the present specification, and additional effectsmay exist.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram depicting a general configuration example of asolid-state imaging device to which the present technology is applied.

FIG. 2 depicts sectional views illustrating structures of a connectionsection when two substrates are bonded to each other.

FIG. 3 is a sectional view of the structure of the substrate of FIG. 2.

FIG. 4 depicts figures illustrating a structure of a solid-state imagingdevice to which the present technology is applied.

FIG. 5 depicts figures illustrating two substrates after bondingthereof.

FIG. 6 illustrates another shape of a floating metal.

FIG. 7 depicts figures illustrating a current path after bonding.

FIG. 8 depicts figures illustrating further shapes of the floatingmetals.

FIG. 9 depicts figures illustrating further shapes of the floatingmetals.

FIG. 10 depicts figures illustrating a structure of a solid-stateimaging device to which the present technology is applied.

FIG. 11 is a block diagram depicting a configuration example of anelectronic apparatus to which the present technology is applied.

DESCRIPTION OF EMBODIMENTS

Modes for carrying out the present disclosure (hereinafter referred toas embodiments) will be described below.

<General Configuration Example of Solid-State Imaging Device>

FIG. 1 depicts a general configuration example as an example of acomplementary metal oxide semiconductor (CMOS) solid-state imagingdevice applied to each embodiment of the present technology.

As depicted in FIG. 1, a solid-state imaging device (element chip) 1includes a pixel region (so-called imaging region) 3 in which aplurality of pixels 2 including photoelectric conversion elements areregularly arranged in a two-dimensional pattern on a semiconductorsubstrate 11 (for example, a silicon substrate), and a peripheralcircuit section.

The pixel 2 includes the photoelectric conversion elements (for example,photodiodes) and a plurality of pixel transistors (so-called MOStransistors). The plurality of pixel transistors may include, forexample, three transistors, specifically, a transfer transistor, a resettransistor, and an amplification transistor, or may include fourtransistors by adding a selection transistor to the three transistors.An equivalent circuit for each pixel 2 (unit pixel) is similar to anordinary one, and, hence, detailed description thereof is omitted here.

In addition, the pixels 2 may have a pixel sharing structure. The pixelsharing structure is configured from a plurality of photodiodes, aplurality of transfer transistors, one shared floating diffusion, andother one each shared pixel transistor. The photodiodes arephotoelectric conversion elements.

The peripheral circuit section is configured from a vertical drivingcircuit 4, a column signal processing circuit 5, a horizontal drivingcircuit 6, an output circuit 7, and a control circuit 8.

The control circuit 8 receives an input clock and data for commanding anoperation mode and the like, and outputs data such as internalinformation concerning the solid-state imaging device 1. Specifically,on the basis of a vertical synchronizing signal, a horizontalsynchronizing signal, and a master clock, the control circuit 8generates a clock signal and control signals which constitute a basisfor operations of the vertical driving circuit 4, the column signalprocessing circuit 5, and the horizontal driving circuit 6. Then, thecontrol circuit 8 inputs these signals to the vertical driving circuit4, the column signal processing circuit 5, and the horizontal drivingcircuit 6.

The vertical driving circuit 4 includes, for example, a shifttransistor, selects a pixel driving wiring, supplies the selected pixeldriving wiring with pulses for driving the pixels 2, and drives thepixels 2 on a row basis. Specifically, the vertical driving circuit 4selectively scans the pixels 2 in the pixel region 3 sequentially in avertical direction on a row basis, and supplies the column signalprocessing circuit 5 with a pixel signal based on signal chargesgenerated according to light reception amounts in the photoelectricconversion elements of the pixels 2, through vertical signal lines 9.

The column signal processing circuits 5 are arranged on the basis of,for example, each column of the pixels 2, and apply signal processingsuch as noise removal to signals outputted from the pixels 2 for onepixel row. Specifically, the column signal processing circuits 5 performsignal processing such as correlated double sampling (CDS) for removalof fixed pattern noises intrinsic of the pixels 2, signal amplification,and analog/digital (A/D) conversion. An output stage of the columnsignal processing circuit 5 is provided with a horizontal selectionswitch (not depicted) in connection with and between the output stageand a horizontal signal line 10.

The horizontal driving circuit 6 includes, for example, a shiftregister, and, by sequentially outputting horizontal scanning pulses,sequentially selects the respective column signal processing circuits 5,and causes pixel signals to be outputted from the respective columnsignal processing circuits 5 to the horizontal signal line 10.

The output circuit 7 applies signal processing to signals sequentiallysupplied from the respective column signal processing circuits 5 throughthe horizontal signal line 10, and outputs the processed signals. Theoutput circuit 7 may perform only buffering, for example, or may performblack level adjustment, column variability correction, various kinds ofdigital signal processing, and the like.

An input/output terminal 12 is provided for transfer of signals to andfrom the exterior.

<Structure Example of Connection Section>

FIG. 2 depicts sectional views illustrating structures of a connectionsection when two substrates (wafers) are bonded to each other. In asubstrate 21, an insulating film 32 is formed with connection pads 31.In a substrate 22, an insulating film 42 is formed with connection pads41. As depicted in A of FIG. 2, the connection pads 31 and theconnection pads 41 are connected together to form current paths, wherebyone intended circuit configuration is formed.

It is to be noted, however, that when misalignment is generated inbonding, the connection pads 31 and the connection pads 41 become open,as depicted in B of FIG. 2, so that an intended circuit operation isimpossible and a lowering in yield is caused.

In view of this, when forming current paths by bonding two substrates,namely, a substrate 21 and a substrate 22 to each other, the connectionpads 31 on at least one side should be formed in large areas for thepurpose of providing a margin for the misalignment in bonding, asdepicted in C of FIG. 2 and D of FIG. 2.

When large-area connection pads 31 are formed as depicted in FIG. 3,however, an influence of plasma induced damage (PID) increases.

In an example of FIG. 3, a section of a structure of a substrate 50 isdepicted. In the substrate 50, a Si substrate 51 is formed with aninsulating film 52, and is provided with a gate electrode 53. From thegate electrode 53, wirings 54 to 57 are sequentially formed, and thelarge-area connection pad 58 connected to the wiring 57 is provided at abonding surface of the substrate 50.

Plasma discharge is used for such a process as etching, sputtering, orchemical vapor deposition (CVD) in a step of forming the large-areaconnection pad 58, and electric charges built up due to the plasmadischarge may induce, for example, deterioration of the gate insulatingfilms of field effect transistors.

To avoid this problem, there has been proposed a method in which anantenna ratio ((area at upper surface of wiring)/(area of oxide film ofgate)) is set to be low, as a design rule. If the area of the connectionpad is set small, however, the margin for misalignment in bonding wouldbe lost.

In view of this, in the present technology, at the time of formingconnection pads, bonding surfaces of both substrates to be bonded toeach other are formed with floating metals in large areas as compared toconnection pads connected to an underlying wiring, and the bonding isconducted, whereby the floating metals are utilized as current paths.

<First Configuration Example of Present Technology>

FIG. 4 depicts figures illustrating a structure of a solid-state imagingdevice to which the present technology is applied. The solid-stateimaging device 100 is configured to include a substrate 101 and asubstrate 102.

In an example of FIG. 4, the substrate 101 and the substrate 102 beforebonding are depicted, with their bonding surfaces 101 a and 102 alocated to face each other. Note that in FIG. 4, a top plan view on thesubstrate 101 side, a sectional view on the substrate 101 side, asectional view on the substrate 102 side, and a top plan view on thesubstrate 102 are depicted in this order from the upper side.

As illustrated in FIG. 4, at the bonding surface 101 a of the substrate101, there are formed a connection pad 112 connected with a wiring 113,and a floating metal 111 large as compared to the connection pad 112. Inaddition, at the bonding surface 102 a of the substrate 102, there areformed a connection pad 122 connected with a wiring 123, and a floatingmetal 121 great as compared to the connection pad 122. The floatingmetal 111 and the connection pad 112 are disposed separately so as notto contact each other, and the floating metal 121 and the connection pad122 are disposed separately so as not to contact each other. Note thatthe connection pad 112, the floating metal 111, the connection pad 122,and the floating metal 121 are formed by the forming technique describedin JP 2004-63859 A, for example.

Next, as depicted in FIG. 5, the substrate 101 and the substrate 102 arebonded to each other at the bonding surfaces 101 a and 102 a. Thesubstrates 101 and 102 are bonded to each other by an arbitrarytechnique such as, for example, plasma joining and normal-temperaturejoining.

In an example of FIG. 5, the substrate 101 and the substrate 102 afterbonding at the bonding surfaces 101 a and 102 a are depicted. Besides,in this figure, a top plan view on the substrate 101 side, a sectionalview on the substrate 101 side, a sectional view on the substrate 102side, and a top plan view of the substrate 102 are depicted in thisorder from the upper side, and further, a top plan view of thesubstrates 101 and 102 in a bonded state is depicted at the lowestposition.

The bonding surfaces of the substrates 101 and 102 will hereinafter bereferred to as a joint interface 131. As depicted in FIG. 5, the jointpad 112 and the floating metal 121 are connected together, the floatingmetal 121 and the floating metal 111 are connected together, thefloating metal 111 and the joint pad 122 are connected together, and thefloating metals 111 and 121 formed on the substrate 101 and thesubstrate 102, respectively, are bonded to each other, whereby thefloating metals 111 and 112 are used as a current path 132.

By this, the area of the connection pad connected to the underlyingwiring in connection with the field effect transistor can be reduced,and electric charges built up (charge-up) due to the plasma dischargeused for such a process as etching, sputtering, or CVD in the step offorming the connection pads can reduce deterioration of the gateinsulating film of the field effect transistors.

<Modification>

While an example in which the shape of the floating metals is arectangle has been depicted in FIGS. 4 and 5 above, the presenttechnology is not limited to the rectangular shape. For example, asdepicted in FIG. 6, the floating metal 111 and the floating metal 121may be formed in an annular shape, and the connection pad 112 and theconnection pad 122 which are circular in shape may be individuallyformed in the areas of holes of the annular shapes.

Note that while the inside and outside shapes of the annular shapes ofthe floating metal 111 and the floating metal 121 as well as the shapesof the connection pad 112 and the connection pad 122 are circular in theexample of FIG. 6, the shapes are not limited to the circular shape.

FIG. 7 depicts figures illustrating a current path in the case where asubstrate 101 and a substrate 102 provided with the floating metal 111and the floating metal 121 in the example of FIG. 6 are bonded to eachother. In the example of FIG. 7, top plan views and sectional views aredepicted in this order from the upper side.

A of FIG. 7 is a figure illustrating the current path in the case wherethe positions of the substrates 101 and 102 are substantially inregister when the substrates are bonded to each other. B of FIG. 7 is afigure illustrating the current path in the case where the positions ofthe substrates 101 and 102 are deviated from each other when thesubstrates are bonded to each other.

In the case where the positions of the substrates 101 and 102 aresubstantially in register as depicted in A of FIG. 7, the connection pad112 of the substrate 101 and the connection pad 122 of the substrate 102are utilized as a current path 132.

On the other hand, in the case where the positions of the substrates 101and 102 are deviated from each other when the substrates are bonded toeach other as depicted in B of FIG. 7, the connection pad 112 of thesubstrate 101, the floating metal 121 of the substrate 102, the floatingmetal 111 of the substrate 101, and the connection pad 122 of thesubstrate 102, in this order (or in the reverse order), are utilized asa current path 132.

FIG. 8 depicts figures illustrating further shapes of floating metals.In the example of FIG. 8, the floating metal 111 of the substrate 101 isconfigured to have a vacant space in a central area and to have aplurality of (in the case of the example of FIG. 8, five) rectangles111-1 to 111-5 elongated in a longitudinal direction being arranged in atransverse direction, with a connection pad 112 formed in the centralarea. In other words, the floating metal 111 is configured in such ashape that a plurality of slits oriented in the longitudinal directionare arranged in the transverse direction of a rectangle having a vacantspace in a central area.

In addition, the floating metal 121 of the substrate 102 is configuredto have a vacant space in a central area and to have a plurality of (inthe case of the example of FIG. 8, five) rectangles 121-1 to 121-5elongated in the transverse direction being arranged in the longitudinaldirection, with a connection pad 122 formed in the central area. Inother words, the floating metal 121 is configured in such a shape that aplurality of slits oriented in the transverse direction are arranged inthe longitudinal direction of a rectangle having a vacant space in acentral area.

A of FIG. 8 to D of FIG. 8 are figures depicting examples ofmisalignment in bonding (hereinafter referred to as overlay deviations)in which the substrate 101 is deviated from the substrate 102individually to the left upper side, the upper side, the right upperside, and the left side when the substrate 101 and the substrate 102 arebonded to each other. E of FIG. 8 is a figure depicting an example inwhich the substrate 101 does not have any overlay deviation in relationto the substrate 102. F of FIG. 8 to I of FIG. 8 are figures depictingexamples of overlay deviation in which the substrate 101 is deviatedfrom the substrate 102 individually to the right side, the left lowerside, the lower side, and the right lower side when the substrate 101and the substrate 102 are bonded to each other.

Only in the case of E of FIG. 8, there is no overlay deviation, so thatthe connection pad 112 of the substrate 101 and the connection pad 122of the substrate 102 are utilized as a current path 132.

In contrast, in the case of F of FIG. 8, parts ranging from theconnection pad 112 of the substrate 101 through a rectangle 121-3 of thesubstrate 102, rectangles 111-2 and 111-4 of the substrate 101, arectangle 121-4 of the substrate 102, and a rectangle 111-1 of thesubstrate 102 to the connection pad 122 are utilized as a current path132.

In the case of H of FIG. 8, parts ranging from the connection pad 112 ofthe substrate 101 through a rectangle 121-5 of the substrate 102,rectangles 111-2 and 111-4 of the substrate 101, a rectangle 121-4 ofthe substrate 102, and a rectangle 111-3 of the substrate 101 to theconnection pad 122 are utilized as a current path 132.

In the case of J of FIG. 8, parts ranging from the connection pad 112 ofthe substrate 101 through a rectangle 121-5 of the substrate 102,rectangles 111-1 and 111-2 of the substrate 101, a rectangle 121-4 ofthe substrate 102, and a rectangle 111-1 of the substrate 101 to theconnection pad 122 are utilized as a current path 132.

Note that for convenience of explanation, the current path is notillustrated in other figures than these figures, but the floating metalsare similarly utilized as a current path also in the cases of the otherfigures.

FIG. 9 depicts figures illustrating further shapes of floating metals.In the example of FIG. 9, the floating metal 111 of the substrate 101and the floating metal 121 of the substrate 102 have a configuration inwhich in a rectangle having a vacant space in a central area, aplurality of (in the case of FIG. 9, twenty) blocks are arranged in thestate of each being overlapping with at least one adjacent block atcorners thereof.

A of FIG. 9 to D of FIG. 9 are figures depicting examples of overlaydeviation in which the substrate 101 is deviated from the substrate 102individually to the left upper side, the upper side, the right upperside, and the left side when the substrate 101 and the substrate 102 arebonded to each other. E of FIG. 9 is a figure depicting an example inwhich the substrate 101 does not have any overlay deviation in relationto the substrate 102. F of FIG. 9 to I of FIG. 9 are figures depictingexamples of overlay deviation in which the substrate 101 is deviatedfrom the substrate 102 individually to the right side, the left lowerside, the lower side, and the right lower side when the substrate 101and the substrate 102 are bonded to each other.

Only in the case of E of FIG. 9, there is no overlay deviation, so thatthe connection pad 112 and the connection pad 122 of the substrate 101are utilized as a current path 132.

In contrast, in the cases of F of FIG. 9, H of FIG. 9, and I of FIG. 9,as depicted in the respective current paths 132, parts ranging from theconnection pad 112 of the substrate 101 to the floating metal 121 andthe connection pad 122 of the substrate 102 are utilized as a currentpath 132.

Note that for convenience of explanation, the current path is notillustrated in other figures than these figures, but the floating metalsare similarly utilized as a current path also in the cases of the otherfigures.

In addition, while an example in which the connection pads and thefloating metals are formed to constitute pairs in the substrate 101 andthe substrate 102 has been described in the above description, this isnot restrictive, and they may also be formed in the following manner.

<Second Configuration Example of Present Technology>

FIG. 10 depicts figures illustrating a structure of a solid-stateimaging device to which the present technology is applied. A solid-stateimaging device 200 is configured to include a substrate 201 and asubstrate 202.

In the example of FIG. 10, there are illustrated the substrate 201 andthe substrate 202 after bonding, specifically, after they are bonded toeach other, with their bonding surfaces facing each other, at a jointinterface 231. Note that in FIG. 10, a top plan view on the substrate201 side, a sectional view on the substrate 201 side, a sectional viewon the substrate 202 side, and a top plan view on the substrate 202 aredepicted in this order from the upper side.

As depicted in FIG. 10, a floating metal 211 is formed at the bondingsurface (namely, the joint interface 231) of the substrate 201.

On the joint surface 231 (namely, the joint interface 231) of thesubstrate 202, there are formed connection pads 221 and 222 which areconnected respectively to underlying wirings 223 and 225. To theunderlying wiring 223 is connected a gate electrode which is formed on asilicon substrate 226.

Therefore, with the substrates 201 and 202 bonded to each other at thejoint interface 231, parts ranging from the gate electrode 224 of thesubstrate 202 through the underlying wiring 223, the connection pad 221,the floating metal 211 of the substrate 201, and the connection pad 222of the substrate 201 to the underlying wiring 225 are utilized as acurrent path 232.

As above-mentioned, in the solid-state imaging device 200 of FIG. 10,also, the area of the connection pads connected to the underlyingwirings in connection with field effect transistors can be reduced.Therefore, electric charges built up (charge-up) due to plasma dischargeused for such a process of etching, sputtering, or CVD in a step offorming the connection pads can reduce deterioration of gate insulatingfilms of the field effect transistors.

Besides, where the floating metal not connected to the underlying wiringis enlarged, margin for bonding can be secured.

Note that an example of stacking two layers of substrates has beendescribed in the above description, the number of layers is not limitedto two.

Note that a configuration in which the present technology is applied toa CMOS solid-state imaging device has been described above, the presenttechnology may also be applied to such a solid-state imaging device as acharge coupled device (CCD) solid-state imaging device. Besides, thepresent technology is applicable not only to the solid-state imagingdevices but also to semiconductor devices.

In addition, the application of the present technology is not limited tosolid-state imaging devices and semiconductor devices, and the presenttechnology is also applicable to imaging devices. The imaging deviceshere include camera systems, such as digital still cameras and digitalvideo cameras, as well as electronic apparatuses that have an imagingfunction, such as mobile phones. Note that a form of a module mounted onan electronic apparatus, namely, a camera module, may be the imagingdevice.

<Configuration Example of Electronic Apparatus>

Here, referring to FIG. 11, a configuration example of an electronicapparatus to which the present technology is applied will be described.

An electronic apparatus 500 depicted in FIG. 11 includes a solid-stateimaging device (element chip) 501, an optical lens 502, a shutter device503, a driving circuit 504, and a signal processing circuit 505. As thesolid-state imaging device 501, the solid-state imaging device accordingto the present technology described above is provided. By this, it ispossible to provide an electronic apparatus 500 in which variations anddeterioration of transistor characteristics are reduced and which hasgood performance.

The optical lens 502 focuses image light (incident light) coming from asubject to form an image on an imaging surface of the solid-stateimaging device 501. By this, signal charges are accumulated in thesolid-state imaging device 501 for a predetermined period of time. Theshutter device 503 controls light irradiation period and light blockingperiod concerning the solid-state imaging device 501.

The driving circuit 504 supplies driving signals for controlling asignal transfer operation of the solid-state imaging device 501 and ashutter operation of the shutter device 503. According to the drivingsignal (timing signal) supplied from the driving circuit 504, thesolid-state imaging device 501 performs signal transfer. The signalprocessing circuit 505 performs various kinds of signal processing to asignal outputted from the solid-state imaging device 501. A video signalobtained upon the signal processing is stored in a storage medium suchas a memory and/or is outputted to a monitor.

Note that herein the steps describing a series of processing as aboveinclude not only processing carried out on a time series basis in thedescribed sequence but also processing carried out concurrently orindividually, without being necessarily carried out on a time seriesbasis.

In addition, the embodiments of the present disclosure are not limitedto the aforementioned embodiments, and various modifications arepossible without departing from the scope of the gist of the presentdisclosure.

Besides, the configuration described above as one device (or processingsection) may be configured as a plurality of devices (or processingsections). Conversely, the configuration described above as a pluralityof devices (or processing sections) may be configured as one device (orprocessing section). In addition, other configuration than theaforementioned ones may be added to the configuration of each device (oreach processing section). Further, part of the configuration of a device(or processing section) may be included in the configuration of otherdevice (or other processing section), if the configuration or operationof a system as a whole is substantially the same. In other words, thepresent technology is not limited to the aforementioned embodiments, andvarious modifications are possible without departing from the scope ofthe gist of the present technology.

While the preferred embodiments of the present disclosure have beendescribed in detail above referring to the accompanying drawings, thedisclosure is not limited to the described examples. It is clear thatone with common knowledge in the art to which the present disclosurepertains can arrive at various modifications and corrections within thecategory of the technical thought described in the claims, and it isunderstood that such modifications and corrections naturally belong tothe technical scope of the present disclosure.

Note that the present technology may assume the followingconfigurations.

(1) A semiconductor device including:

a floating metal formed at a bonding surface of a substrate,

wherein the floating metal is bonded to be used as a current path.

(2) The semiconductor device as described in (1) above,

wherein the floating metal is formed to be greater in area than a metalconnected to an underlying wiring at a bonding surface of anothersubstrate to be bonded to the bonding surface of the substrate.

(3) The semiconductor device as described in (1) or (2) above, furtherincluding:

a first floating metal at a bonding surface of a first substrate;

a second floating metal at a bonding surface of a second substrate;

a first metal connected to an underlying wiring at the bonding surfaceof the first substrate; and

a second metal connected to an underlying wiring at the bonding surfaceof the second substrate,

wherein the first floating metal and the second metal are bonded to eachother,

the second floating metal and the first metal are bonded to each other,and

the first floating metal and the second floating metal are bonded toeach other.

(4) The semiconductor device as described in (3) above,

wherein the first floating metal is formed in such a manner as to have avacant space in a first central area corresponding to a central portionof the first floating metal and to surround the first metal formed inthe first central area, and

the second floating metal is formed in such a manner as to have a vacantspace in a second central area corresponding to a central portion of thesecond floating metal and to surround the second metal formed in thesecond central area.

(5) The semiconductor device as described in (3) or (4) above,

wherein the first floating metal and the first metal are formed incircular shapes at the bonding surface of the first substrate, and thesecond floating metal and the second metal are formed in circular shapesat the bonding surface of the second substrate.

(6) The semiconductor device as described in (3) or (4) above,

wherein the first floating metal and the first metal are formed inrectangular shapes at the bonding surface of the first substrate, andthe second floating metal and the second metal are formed in rectangularshapes at the bonding surface of the second substrate.

(7) The semiconductor device as described in any one of (3) to (6)above,

wherein the first floating metal is configured at the bonding surface ofthe first substrate in such a shape that, in either one of a transversedirection and a longitudinal direction of a rectangle with a vacantspace in the first central area, a plurality of slits oriented

in another direction are arranged, and

the second floating metal is configured at the bonding surface of thesecond substrate in such a shape that, in the other direction of arectangle with a vacant space in the second central area, a plurality ofslits oriented in the one direction are arranged.

(8) The semiconductor device as described in any one of (3) to (6)above,

wherein the first floating metal is configured at the bonding surface ofthe first substrate in such a shape that a plurality of blocks are eachoverlapping with at least one adjacent block at corners thereof whilehaving a vacant space in the first central area, and

the second floating metal is configured at the bonding surface of thesecond substrate in such a shape that a plurality of blocks are eachoverlapping with at least one adjacent block at corners thereof whilehaving a vacant space in the second central area.

(9) The semiconductor device as described in (1) or (2) above, furtherincluding:

a floating metal at a bonding surface of a first substrate; and

at least two metals connected to an underlying wiring at

a bonding surface of a second substrate,

wherein the floating metal and the at least two metals are bondedtogether.

(10) The semiconductor device as described in any one of (1) to (9)above,

wherein the semiconductor device is a solid-state imaging device.

(11) An electronic apparatus including:

a solid-state imaging device which includes a floating metal formed at abonding surface of a substrate, and in which the floating metal isbonded to be utilized as a current path;

a signal processing circuit which processes an output signal outputtedfrom the solid-state imaging device; and

an optical system which lets incident light be incident on thesolid-state imaging device.

REFERENCE SIGNS LIST

100 Solid-state imaging device, 101, 102 Substrate, 111 Floating metal,112 Connection pad, 113 Wiring, 121 Floating metal, 122 Connection pad,123 Wiring, 131 Joint interface, 132 Current path, 200 Solid-stateimaging device, 201, 202 Substrate, 211 Floating metal, 221, 222Connection pad, 223 Underlying wiring, 224 Gate electrode, 225Underlying wiring, 226 Silicon substrate, 231 Joint interface, 232Current path, 500 Electronic apparatus, 501 Solid-state imaging device,502 Optical lens, 503 Shutter device, 504 Driving circuit, 505 Signalprocessing circuit

1. A semiconductor device comprising: a floating metal formed at abonding surface of a substrate, wherein the floating metal is bonded tobe utilized as a current path.
 2. The semiconductor device according toclaim 1, wherein the floating metal is formed to be greater in area thana metal connected to an underlying wiring at a bonding surface ofanother substrate to be bonded to the bonding surface of the substrate.3. The semiconductor device according to claim 2, further comprising: afirst floating metal at a bonding surface of a first substrate; a secondfloating metal at a bonding surface of a second substrate; a first metalconnected to an underlying wiring at the bonding surface of the firstsubstrate; and a second metal connected to an underlying wiring at thebonding surface of the second substrate, wherein the first floatingmetal and the second metal are bonded to each other, the second floatingmetal and the first metal are bonded to each other, and the firstfloating metal and the second floating metal are bonded to each other.4. The semiconductor device according to claim 3, wherein the firstfloating metal is formed in such a manner as to have a vacant space in afirst central area corresponding to a central portion of the firstfloating metal and to surround the first metal formed in the firstcentral area, and the second floating metal is formed in such a manneras to have a vacant space in a second central area corresponding to acentral portion of the second floating metal and to surround the secondmetal formed in the second central area.
 5. The semiconductor deviceaccording to claim 4, wherein the first floating metal and the firstmetal are formed in circular shapes at the bonding surface of the firstsubstrate, and the second floating metal and the second metal are formedin circular shapes at the bonding surface of the second substrate. 6.The semiconductor device according to claim 4, wherein the firstfloating metal and the first metal are formed in rectangular shapes atthe bonding surface of the first substrate, and the second floatingmetal and the second metal are formed in rectangular shapes at thebonding surface of the second substrate.
 7. The semiconductor deviceaccording to claim 4, wherein the first floating metal is configured atthe bonding surface of the first substrate in such a shape that, ineither one of a transverse direction and a longitudinal direction of arectangle with a vacant space in the first central area, a plurality ofslits oriented in another direction are arranged, and the secondfloating metal is configured at the bonding surface of the secondsubstrate in such a shape that, in the other direction of a rectanglewith a vacant space in the second central area, a plurality of slitsoriented in the one direction are arranged.
 8. The semiconductor deviceaccording to claim 4, wherein the first floating metal is configured atthe bonding surface of the first substrate in such a shape that aplurality of blocks are each overlapping with at least one adjacentblock at corners thereof while having a vacant space in the firstcentral area, and the second floating metal is configured at the bondingsurface of the second substrate in such a shape that a plurality ofblocks are each overlapping with at least one adjacent block at cornersthereof while having a vacant space in the second central area.
 9. Thesemiconductor device according to claim 3, further comprising: afloating metal at a bonding surface of a first substrate; and at leasttwo metals connected to an underlying wiring at a bonding surface of asecond substrate, wherein the floating metal and the at least two metalsare bonded together.
 10. The semiconductor device according to claim 2,wherein the semiconductor device is a solid-state imaging device.
 11. Anelectronic apparatus comprising: a solid-state imaging device whichincludes a floating metal formed at a bonding surface of a substrate andin which the floating metal is bonded to be utilized as a current path;a signal processing circuit which processes an output signal outputtedfrom the solid-state imaging device; and an optical system which letsincident light be incident on the solid-state imaging device.